Ref. | Equiv. | Aplic. | ucb | uce | ueb | PAR | Box Caixa | Pinos Pinout |
---|---|---|---|---|---|---|---|---|
STTB6006V1 Diodo Silicio Diodo Clamp / duplo | - Eur: Jap: Usa: Rus: | =STTB 6006T1 | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
STTB806D Diodo Silicio Diodo clamp / chaveamento / potência | BYR29/600.../1000, FE 8J, MUR860 Eur: Jap: Usa: Rus: | 600V, 8A, <100ns | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
STV-3-G Zener Silicio Uso diverso | - Eur: Jap: Usa: Rus: | 1,72..1,80V(7mA) | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
STV-3-O Zener Silicio Uso diverso | - Eur: Jap: Usa: Rus: | 1,60..1,68V(7mA) | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
STV-3-Y Zener Silicio Uso diverso | - Eur: Jap: Usa: Rus: | 1,66..1,74V(7mA) | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
STV102 MOS FET Canal N Potência | BUZ357...358, BUZ380...381, 2SK685 Eur: Jap: Usa: Rus: | 1000V, 4,2A, 125W, 140/400ns | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
STV82 MOS FET Canal N Potência | BUZ355...356, 2SK685, 2SK695 Eur: Jap: Usa: Rus: | 800V, 5,5A, 125W, 140/400ns | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
STVHD90 MOS FET Canal N Potência | PRFZ40 Eur: Jap: Usa: Rus: | 50V, 52A, 125W, 140/420ns | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
STW12N60 MOS FET Canal N Uso diverso | =STH 12N60 Eur: Jap: Usa: Rus: | =STH 12N60 | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
STW12N60 MOS FET Canal N Uso diverso | =STH 12N60 Eur: Jap: Usa: Rus: | =STH 12N60 | HFE: Pc: Ic: Ft: CC:0 TJ: |
2N | 2SA | 2SB | 2SC | 2SD | 2SJ | 2SK | AC | AD | AF | AL | ASY | ASZ | BC | BCP | BCX | BCY | BD | BF | BG | BS |
BU | BUT | CA | DT | FT | GD | HP | IRF | IT | J | KSC | LM | M | MG | MPSA | MRF | PN | R | S | SGS | |
SS | STA | TIP | V | VN |
1N4000 | 1N46xx | AA | BA | BAR | BAS | BAT | BAV | BAW | BAX | BB | BY | BYD | BYT | BYV | BYZ | BYW | BYX | BYY |
EM | ER | ES | FE | FR | GP | LL | MA | MBR | MUR | OA | PBY | SB | SKE | SLA | SRP |