Ref. | Equiv. | Aplic. | ucb | uce | ueb | PAR | Box Caixa | Pinos Pinout |
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1N86 Diodo Germânio |
AA117...118, AA132...134 | 70V, 50mA | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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1N860 Diodo Silicio |
BA157...159, BAY 88...90, BY 204/4 | =1N857, 300V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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1N861 Diodo Silicio |
BA157...159, BAY 89...90, BY 204/4 | =1N857, 400V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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1N862 Diodo Silicio |
BA158...159, BAY 89...90, BY 204/8 | =1N857, 500V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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1N863 Diodo Silicio |
BA158...159, BAY 89...90, BY 204/8 | =1N857, 600V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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1N864 Diodo Silicio |
BA158...159, BAY 90...91, BY 204/8 | =1N857, 700V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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1N865 Diodo Silicio |
BA158...159, BAY 90...91, BY 204/8 | =1N857, 800V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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1N866 Diodo Silicio |
BA159, BAY 90...91, BY 204/10 | =1N857, 900V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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1N867 Diodo Silicio |
BA159, BAY 90...91, BY 204/10 | =1N857, 1000V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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1N868 Diodo Silicio |
BA157...159, BAY 86...90, BY 204/4 | 50V, 0,1A | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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